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GE 2N170- The 2N107 companion. In 1956, GE engineers added an NPN transistor companion to the 2N107. They designated it the 2N170, manufactured with the rate grown junction process originally developed by Bell Labs. It was designed for use in higher frequency applications, such as radio frequency ( RF) amplification,. Complementary Silicon Plastic Power Transistors. the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION 1 BASE EMITTER 3 COLLECTOR 2, 4. 2N107 from American Microsemiconductor, Inc.